Nonlinear susceptibilities of AIIIBV semiconductors in far-infrared and microwave range

Details Nonlinear susceptibilities of AIIIBV semiconductors in far-infrared and microwave range Nonlinear susceptibilities of AIIIBV semiconductors in far-infrared and microwave range

May 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002spie.4748..313m&link_type=abstract

Proc. SPIE Vol. 4748, p. 313-316, ICONO 2001: Fundamental Aspects of Laser-Matter Interaction and Physics of Nanostructures, Ana

Physics

Scientific paper

An approach to calculation of nonlinear susceptibilities of semiconductors in far infrared and microwave range based on account of interaction of free carries with intrinsic excitations of semiconductors and ionized impurities is developed. Numerical dependencies of real part of third order non-linear susceptibility on frequency, temperature and concentration of impurities for a set of semiconductors are obtained.

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