Type-II InGaAs/GaAsSb superlattice for photodetection in the near infrared

Details Type-II InGaAs/GaAsSb superlattice for photodetection in the near infrared Type-II InGaAs/GaAsSb superlattice for photodetection in the near infrared

May 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002spie.4650..179b&link_type=abstract

Proc. SPIE Vol. 4650, p. 179-184, Photodetector Materials and Devices VII, Gail J. Brown; Manijeh Razeghi; Eds.

Physics

Scientific paper

The optical properties of an In0.52Ga0.48As/GaAs0.51Sb0.49 type-II superlattice lattice matched to InP(001) was characterized by photo luminescence and near infrared photoresponse. The samples were designed for optical emission near 1.8micrometers and were grown by molecular beam epitaxy. At 4K, a strong type-II luminescence at 1.8micrometers (689meV0 with a full width at half maximum (FWHM) of 18 meV was observed. Similarly, the onset of the band edge photoresponse occurred at 1.8micrometers (693 meV) at 10K. We believe this to be the first observation of both luminescence and photoresponse from the InGaAs/GaAsSb/InP materials system grown by any technique.

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