Wafer-bonded InGaAs/silicon avalanche photodiodes

Details Wafer-bonded InGaAs/silicon avalanche photodiodes Wafer-bonded InGaAs/silicon avalanche photodiodes

May 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002spie.4650...37p&link_type=abstract

Proc. SPIE Vol. 4650, p. 37-43, Photodetector Materials and Devices VII, Gail J. Brown; Manijeh Razeghi; Eds.

Physics

1

Scientific paper

Wafer-bonded avalanche photodiodes (APDs) combining InGaAs for the absorption layer and silicon for the multiplication layer have been fabricated. The reported APDs have a very low room-temperature dark current density of only 0.7 mA/cm2 at a gain of 10. The dark current level is as low as that of conventional InGaAs/InP APDs. High avalanche gains in excess of 100 are presented. The photodiode responsivity at a wavelength of 1.31 micrometers is 0.64 A/W, achieved without the use of an anti-reflection coating. The RC-limited bandwidth is 1.45 GHz and the gain-bandwidth product is 290 GHz. The excess noise factor F is much lower than that of conventional InP-based APDs, with values of 2.2 at a gain of 10 and 2.3 at a gain of 20. This corresponds to an effective ionization rate ratio keff as low as 0.02. The expected receiver sensitivity for 2.5 Gb/s operation at (lambda) = 1.31 um using our InGaAs/silicon APD is -41 dBm at an optimal gain of M = 80.

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