Molecular beam epitaxy of HgCdTe for infrared focal plane arrays

Details Molecular beam epitaxy of HgCdTe for infrared focal plane arrays Molecular beam epitaxy of HgCdTe for infrared focal plane arrays

Jul 1994

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994spie.2225..237m&link_type=abstract

Proc. SPIE Vol. 2225, p. 237-244, Infrared Detectors and Focal Plane Arrays III, Eustace L. Dereniak; Robert E. Sampson; Eds.

Physics

1

Scientific paper

Middle wavelength IR photovoltaic detectors were fabricated with HgCdTe epilayers grown by molecular beam epitaxy. The epilayers were grown on a slightly misoriented (111) B CdZnTe substrate and were twin free. Epitaxy was carried out with substrate rotation and the wavelength uniformity achieved on a 20 X 20 mm(superscript 2) wafer was 0.80%. A planar photovoltaic technology was used to produce the IR photodiodes and the junction formation was obtained by ion implantation. Linear array photodiodes and 128 X 128 2D-arrays interconnected with a CCD readout circuit were achieved. RoA product values of 4.7 10(superscript 5) ohm cm(superscript 2) were measured on diodes with a 4.7 micron cutoff wavelength at 77 K. The good homogeneity of the layer is reflected by the low value, 4.4%, of the standard deviation on the short circuit current histogram of the 2D-array.

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