Model of the x-ray response of the ACIS CCD

Details Model of the x-ray response of the ACIS CCD Model of the x-ray response of the ACIS CCD

Nov 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3444..267p&link_type=abstract

Proc. SPIE Vol. 3444, p. 267-275, X-Ray Optics, Instruments, and Missions, Richard B. Hoover; Arthur B. Walker; Eds.

Physics

Optics

3

Scientific paper

We have developed a comprehensive model of the response of a CCD to soft x-ray illumination. The model is based on the Monte Carlo technique and follows the interactions with the device material of individual photons thrown into the structure, calculating device reaction to each of them. It incorporates a very detailed description of the CCD gate structure, as well as accurately measured absorption coefficients. The fluorescent and escape peak model takes into account interactions inside the gate structure, which dramatically improves the agreement with the experimental data at energies close to the Si absorption edge. The shape of the low energy tail is simulated according to our new model of electron cloud charge splitting at the interface between Si and SiO(subscript 2). An origin of the tail in the horizontally split events is explained as coming from the p+ area in the channel stop region and is modeled accordingly.

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