Electromagnetic manipulation for anti-Zeno effect in an engineered quantum tunneling process

Details Electromagnetic manipulation for anti-Zeno effect in an engineered quantum tunneling process Electromagnetic manipulation for anti-Zeno effect in an engineered quantum tunneling process

2006-03-17

arxiv.org/abs/quant-ph/0603152v2

Physics

Quantum Physics

6 pages, 5 figures

Scientific paper

10.1103/PhysRevA.74.032102

We investigate the quantum Zeno and anti-Zeno effects for the irreversible
quantum tunneling from a quantum dot to a ring array of quantum dots. By
modeling the total system with the Anderson-Fano-Lee model, it is found that
the transition from the quantum Zeno effect to quantum anti-Zeno effect can
happen as the magnetic flux and the gate voltage were adjusted.

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