Electron impact excitation of semi-forbidden and allowed transitions in SI III

Details Electron impact excitation of semi-forbidden and allowed transitions in SI III Electron impact excitation of semi-forbidden and allowed transitions in SI III

Apr 1981

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1981jphb...14.1333b&link_type=abstract

Journal of Physics B - Atomic and Molecular Physics, vol. 14, Apr. 28, 1981, p. 1333-1340. Research supported by the Science Res

Physics

39

Astronomical Spectroscopy, Atomic Excitations, Collision Parameters, Electron Impact, Silicon, Transition Probabilities, Electron States, Interstellar Matter, Ions, Maxwell-Boltzmann Density Function, Resonance Lines, Stellar Atmospheres, Tables (Data)

Scientific paper

Collision strengths averaged over a Maxwellian distribution of electrons have been calculated for all the transitions within the first twelve states of Si III in the temperature range 5,000-250,000 K. The calculations have been carried out using configuration interaction wavefunctions and the R-matrix method. The dominant role of resonance effects in semi-forbidden transitions is emphasized.

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