Growth and investigation of p-n structures based on Fe3O4thin films

Details Growth and investigation of p-n structures based on Fe3O4thin films Growth and investigation of p-n structures based on Fe3O4thin films

Mar 2008

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2008jphcs.100h2028s&link_type=abstract

Journal of Physics: Conference Series, Volume 100, Issue 8, pp. 082028 (2008).

Physics

Scientific paper

We report preparation and investigation of p-n heterostructures based on Fe3O4 thin films grown on n-Si(111) substrates as well as indium oxide (IO) and tin doped indium oxide (ITO) layers deposited on lattice-matched monocrystalline ZrO2:Y2O3(100). Thin Fe3O4 films with thickness ranging from 100 to 300 nm were grown in situ at 400 K using dc magnetron sputtering technique. The measurement of microstructure revealed polycrystalline quality of Fe3O4 films on silicon substrate and epitaxial growth on (IO)ITO/YSZ. Investigation of surface composition by X-ray Photoelectron Spectroscopy (XPS) showed that Fe 2p peak consists of three main peaks, namely, metallic iron Fe(0), Fe(II) and Fe(III). Transport measurements of Fe3O4/n-Si heterostructures demonstrated rectifying behaviour in a wide temperature range (T = 78÷300 K) while those prepared by growing Fe3O4 layers on indium oxide (IO) demonstrated nonlinear current-voltage (I-V) dependencies at low temperatures (T<120K).

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