X-ray photoemission determination of the valence-band maximum in the Zn(x)Hg(1-x)Te semiconductor alloy

Details X-ray photoemission determination of the valence-band maximum in the Zn(x)Hg(1-x)Te semiconductor alloy X-ray photoemission determination of the valence-band maximum in the Zn(x)Hg(1-x)Te semiconductor alloy

Sep 1989

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989crasm.309..973m&link_type=abstract

Academie des Sciences (Paris), Comptes Rendus, Serie II - Mecanique, Physique, Chimie, Sciences de l'Univers, Sciences de la Ter

Physics

Mercury Tellurides, Semiconductors (Materials), Valence, X Ray Spectroscopy, Zinc Tellurides, Infrared Detectors, Mercury Cadmium Tellurides, Photoelectric Emission, Stoichiometry

Scientific paper

An X-ray photoemission study of the Zn3d 5/2, Hg5d 5/2, and Te4d 5/2 core levels in Zn(x)Hg(1-x)Te alloy was performed in the compelte x composition range. The valence-band offset between ZnTe and HgTe was found to be equal to 0.17 eV. A slight nonlinear variation of the position of the Te4d 5/2 level was observed which was the consequence of a cationic disorder around Te.

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