Structure analysis of the Ga-stabilized GaAs(001)-c(8x2) surface at high temperatures

Details Structure analysis of the Ga-stabilized GaAs(001)-c(8x2) surface at high temperatures Structure analysis of the Ga-stabilized GaAs(001)-c(8x2) surface at high temperatures

2002-02-05

arxiv.org/abs/physics/0202015v1

Physics

Chemical Physics

14 pages, 4 figures, 1 table

Scientific paper

10.1103/PhysRevB.65.233311

Structure of the Ga-stabilized GaAs(001)-c(8x2) surface has been studied using rocking-curve analysis of reflection high-energy electron diffraction (RHEED). The c(8x2) structure emerges at temperatures higher than 600C, but is unstable with respect to the change to the (2x6)/(3x6) structure at lower temperatures. Our RHEED rocking-curve analysis at high temperatures revealed that the c(8x2) surface has the structure which is basically the same as that recently proposed by Kumpf et al. [Phys. Rev. Lett. 86, 3586 (2001)]. We found that the surface atomic configurations are locally fluctuated at high temperatures without disturbing the c(8x2) periodicity.

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