A Monolithic Pixel Sensor in 0.15 micron Fully Depleted SOI Technology

Details A Monolithic Pixel Sensor in 0.15 micron Fully Depleted SOI Technology A Monolithic Pixel Sensor in 0.15 micron Fully Depleted SOI Technology

2007-09-26

arxiv.org/abs/0709.4218v1

Nucl.Instrum.Meth.A583:526-528,2007

Physics

Instrumentation and Detectors

4 pages, 5 figures, submitted to Nuclear Instruments and Methods A

Scientific paper

10.1016/j.nima.2007.09.042

This letter presents the design of a monolithic pixel sensor with 10x10
micron^2 pixels in OKI 0.15 micron fully depleted SOI technology and first
results of its characterisation. The response of the chip to charged particles
has been studied on the 1.35 GeV electron beam at the LBNL ALS.

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