Position Dependence of Charge Collection in Prototype Sensors for the CMS Pixel Detector

Details Position Dependence of Charge Collection in Prototype Sensors for the CMS Pixel Detector Position Dependence of Charge Collection in Prototype Sensors for the CMS Pixel Detector

2003-12-02

arxiv.org/abs/physics/0312009v6

IEEE Trans.Nucl.Sci. 51 (2004) 1150-1157

Physics

Instrumentation and Detectors

Contribution to the IEEE-NSS Oct. 2003, Portland, OR, USA, submitted to IEEE-TNS 7 pages, 8 figures, 1 table. Revised, title c

Scientific paper

10.1109/TNS.2004.829487

This paper reports on the sensor R&D activity for the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluencec of 1E15 n_eq/cm**2 at the CERN PS. Afterward they were bump bonded to unirradiated readout chips and tested using high energy pions in the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed full analogue readout and therefore a good characterization of the sensors in terms of noise and charge collection properties. The position dependence of signal is presented and the differences between the two sensor options are discussed.

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