Highly sensitive, photon number resolving detectors mediated by phonons using $δ$-doped GaAs transistors

Details Highly sensitive, photon number resolving detectors mediated by phonons using $δ$-doped GaAs transistors Highly sensitive, photon number resolving detectors mediated by phonons using $δ$-doped GaAs transistors

2010-05-03

arxiv.org/abs/1005.0401v1

Nano Lett., 2010, 10 (4), pp 1364-1368

Physics

Optics

15 pages, 5 figures

Scientific paper

10.1021/nl904296p

We report a photon number resolving detector using two-dimensional electron gas (2DEG) based transistors. When the photon pulses impinge on the absorption region, the generated phonons dissipate ballistically in the 2DEG toward the trench isolated nanowire transistors near the surface. The phonon-electron interaction induces a positive conductance in the transistors, resulting in a current increase. With this principle, we obtain an internal quantum efficiency for this type of detector of up to 85%.

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