Thermal properties of AlN-based atom chips

Details Thermal properties of AlN-based atom chips Thermal properties of AlN-based atom chips

2009-06-16

arxiv.org/abs/0906.2880v3

European Physical Journal D 56 (2009) 33

Physics

Atomic Physics

Scientific paper

10.1140/epjd/e2009-00275-5

We have studied the thermal properties of atom chips consisting o high thermal conductivity Aluminum Nitride (AlN) substrates on which gold microwires are directly deposited. We have measured the heating of wires of several widths and with different thermal couplings to the copper mount holding the chip. The results are in good agreement with a theoretical model where the copper mount is treated as a heat sink and the thermal interface resistance between the wire and the substrate is vanishing. We give analytical formulas describing the different transient heating regimes and the steady state. We identify criteria to optimize the design of a chip as well as the maximal currents $I_c$ that can be fed in the wires. For a 600 $\mu$m thick-chip glued on a copper block with Epotek H77, we find $I_c=16$ A for a 3 $\mu$m high, 200 $\mu$m wide-wire.

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