Monte-Carlo Simulations of Electron Channelling a Bent (110) Channel in Silicon

Details Monte-Carlo Simulations of Electron Channelling a Bent (110) Channel in Silicon Monte-Carlo Simulations of Electron Channelling a Bent (110) Channel in Silicon

2011-04-19

arxiv.org/abs/1104.3890v2

Physics

Accelerator Physics

16 pages, 6 figures

Scientific paper

Results obtained with the a new Monte-Carlo code for the channelling of 855 MeV electrons along the crystallographic plane (110) in a bent Silicon crystal are presented. The definitions of the dechannelling length and the asymptotic acceptance of the channel are given in a form that is suitable for the Monte-Carlo procedure. The dependence of these quantities on the crystal bending is studied.

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