Characterization of Prototype BTeV Silicon Pixel Sensors Before and After Irradiation

Details Characterization of Prototype BTeV Silicon Pixel Sensors Before and After Irradiation Characterization of Prototype BTeV Silicon Pixel Sensors Before and After Irradiation

2002-04-08

arxiv.org/abs/hep-ex/0204010v1

IEEETrans.Nucl.Sci.49:1743-1749,2002

Physics

High Energy Physics

High Energy Physics - Experiment

8 pages in postscript format. Presented at 2001 IEEE Nuclear Science Symposium 4-10 November 2001 San Diego, California

Scientific paper

10.1109/TNS.2002.801710

We report on measurements performed on silicon pixel sensor prototypes exposed to a 200 MeV proton beam at the Indiana University Cyclotron Facility. The sensors are of n+/n/p+ type with multi-guard ring structures on the p+-side and p-stop electrode isolation on the n+-side. Electrical characterization of the devices was performed before and after irradiation up to a proton fluence of 4E14 p/cm2. We tested pixel sensors fabricated from normal and oxygen-enriched silicon wafers and with two different p-stop isolation layouts: common p-stop and individual p-stop.

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