Low-Threshold Surface-Passivated Photonic Crystal Nanocavity Laser

Details Low-Threshold Surface-Passivated Photonic Crystal Nanocavity Laser Low-Threshold Surface-Passivated Photonic Crystal Nanocavity Laser

2007-03-21

arxiv.org/abs/quant-ph/0703198v3

Physics

Quantum Physics

3 pages, 2 figures

Scientific paper

10.1063/1.2769957

The efficiency and operating range of a photonic crystal laser is improved by passivating the InGaAs quantum well (QW) gain medium and GaAs membrane using an (NH4)S treatment. The passivated laser shows a four-fold reduction in nonradiative surface recombination rate, resulting in a four-fold reduction in lasing threshold. A three-level carrier dynamics model explains the results and shows that lasing threshold is as much determined by surface recombination losses as by the cavity quality factor (Q). Surface passivation therefore appears crucial in operating such lasers under practical conditions.

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