Long spin coherence in silicon with an electrical spin trap readout

Details Long spin coherence in silicon with an electrical spin trap readout Long spin coherence in silicon with an electrical spin trap readout

2008-06-20

arxiv.org/abs/0806.3431v2

Physical Review Letters 101, 207602 (2008)

Physics

Quantum Physics

13 pages, 3 figures. References updated, figure removed to reduce length of paper

Scientific paper

10.1103/PhysRevLett.101.207602

Pulsed electrically-detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B > 8.5 T) and low temperatures (T = 2.8 K) is presented. We find that the spin-dependent capture and reemission of highly polarized (>95%) conduction electrons by equally highly polarized 31P donor electrons introduces less decoherence than other mechanisms for spin-to-charge conversion. This allows the electrical detection of spin coherence times in excess of 100 microseconds: 50 times longer than the previous maximum for electrically-detected spin readout experiments.

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