Hot electron spectroscopy and microscopy

Details Hot electron spectroscopy and microscopy Hot electron spectroscopy and microscopy

Oct 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004rpph...67.1863s&link_type=abstract

Reports on Progress in Physics, Volume 67, Issue 10, pp. 1863-1914 (2004).

Physics

14

Scientific paper

Semiconductor heterostructures, such as double-barrier resonant tunnelling diodes and superlattices, are nowadays used for many applications. One very versatile and powerful method to study electronic transport in heterostructures is hot electron spectroscopy. Hot electron spectroscopy can be carried out in two complementary versions: device-based techniques usually employ so-called hot electron transistors (HETs), while ballistic electron emission microscopy (BEEM) uses a scanning tunnelling microscope (STM) as the source of ballistic electrons.
In this review, spectroscopic results obtained by these two methods are compared and discussed. It is shown that BEEM results are strongly influenced by electron refraction effects, while the behaviour of HET devices is dominated by inelastic scattering effects in the base and drift region of the device. Thus, STM-based BEEM/S and HET-based spectroscopy are genuinely complementary methods, which yield supplementary results.

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