Window photovoltaic detectors

Details Window photovoltaic detectors Window photovoltaic detectors

Mar 1974

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1974cnrs.rept.....v&link_type=abstract

Final Report Centre National de la Recherche Scientifique, Meudon-Bellevue (France). Lab. de Physique du Solide.

Physics

Infrared Detectors, Mercury Alloys, P-N Junctions, Photovoltaic Effect, Windows (Intervals), Cadmium Alloys, Cadmium Tellurides, Carbon Dioxide Lasers, Majority Carriers, Mercury Tellurides, Permittivity, Photoconductors, Solid State Devices, Tellurium Alloys

Scientific paper

Infrared photovoltaic detection, based on the bandgap absorption edge shift of semiconductors which is due to the band filling effects of the p-n junction majority electrons was studied. Intra- and interband contributions to the optical dielectric constant of HgTe and HgCdTe alloys, with n and p type doping were investigated. The window photovoltaic effect was experimentally produced in the range 8-12 micron, with illumination of the n layer with a doping level between 10 to the sixteenth and 10 to the seventeenth/cu cm, and internal quantum efficiency inferior to 0.5. Detectivity, heterodyne detection threshold of CO2 laser and flat frequency response limits are given.

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