A new versatile, large size MOVPE reactor

Details A new versatile, large size MOVPE reactor A new versatile, large size MOVPE reactor

Dec 1988

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1988jcrgr..93..207f&link_type=abstract

(Japan Society of Applied Physics and Japanese Association of Crystal Growth, Conference on Metalorganic Vapor Phase Epitaxy, 4t

Physics

14

Aluminum Gallium Arsenides, Organometallic Compounds, Reactor Design, Vapor Phase Epitaxy, Atmospheric Pressure, Electron Gas, Hall Effect, Mass Transfer, Photoluminescence, Quantum Wells, Wafers

Scientific paper

A new reactor for MOVPE of III-V semiconductors is presented. Seven 2-in wafers or five 3-in wafers are in planetary motion in a circular growth chamber, with the gas flowing radially from the center to the edge. The planetary motion is achieved using a new technique of levitation and rotation of the substrate holder, which is described in detail. The chamber geometry is also described in detail, and numerical mass transport simulations are compared with experimental results on growth at atmospheric pressure. Thickness and doping of GaAs layers are uniform to within + or - 1 percent on 2-in wafers. GaAs-Ga(0.5)Al(0.5)As quantum well photoluminescence spectra are shown. Very high mobilities obtained on GaAs-(Ga,Al)As two-dimensional electron gas structures with a record value of 720,000 sq cm/V s at 1.5 K are are reported.

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