Optical Properties Of β-FeSi2 Thin Films Grown By Magnetron Sputtering

Details Optical Properties Of β-FeSi2 Thin Films Grown By Magnetron Sputtering Optical Properties Of β-FeSi2 Thin Films Grown By Magnetron Sputtering

Apr 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007aipc..899..661t&link_type=abstract

SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP Conference Proceedings, Volume 899, pp. 661-661 (2007).

Physics

Optical Properties Of Bulk Materials And Thin Films, Deposition By Sputtering

Scientific paper

β-FeSi2 semiconductor thin films have been grown on Si(100) and Si(111) substrate at room temperature by unbalanced magnetron sputtering. The thicknesses of β-FeSi2 thin films have been prepared to have value between 0.3-1μm. Optical characteristic of the β-FeSi2 films have been deduced using Fourier Transform Infrared Spectroscopy (FT-IR) in the wavelength range 1000-2000nm. The β-FeSi2 films have been determinated to have optical direct band gap from the plot of (αhυ)2 vs. hυ The direct band gap values of the films have been observed to vary between 0.82-0.89 eV depending on the type of substrates.

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