Thermodynamic Analysis of the High Temperature Processes in the System Si-C-H-Cl

Details Thermodynamic Analysis of the High Temperature Processes in the System Si-C-H-Cl Thermodynamic Analysis of the High Temperature Processes in the System Si-C-H-Cl

Apr 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007aipc..899..621l&link_type=abstract

SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP Conference Proceedings, Volume 899, pp. 621-621 (2007).

Physics

Ceramics And Refractories, Thermal Analysis, Differential Thermal Analysis, Differential Thermogravimetric Analysis, Decomposition Reactions, Chemical Thermodynamics

Scientific paper

In the present work a thermodynamic analysis of the interaction
processes in the Si-C-H-Cl system in the temperature interval 1000-3000
K is carried out. The optimal conditions giving the maximum yield of the
silicon carbide by pyrolysis of mixture of volatile compounds of carbon
and silicon have been defined.

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