Topological defect formation from 2PI effective action techniques

Details Topological defect formation from 2PI effective action techniques Topological defect formation from 2PI effective action techniques

2010-12-06

arxiv.org/abs/1012.1212v2

Nucl.Phys.B847:197-219,2011

Physics

High Energy Physics

High Energy Physics - Phenomenology

32 pages, 11 figures

Scientific paper

10.1016/j.nuclphysb.2011.01.024

We propose a quantum approach to nonequilibrium dynamics which combines the successful aspects of classical-statistical simulations on a lattice with the ability to take into account quantum corrections. It is based on the 2PI effective action for inhomogeneous fields and a volume average. This procedure does not involve any double counting which could appear in sampling prescriptions for inhomogeneous quantum evolutions. As an example, we study nonequilibrium dynamics of defect formation in 1+1 dimensional relativistic scalar field theory and compare to insufficient descriptions based on homogeneous quantum fields. The latter are analyzed in detail by coupling the field to an external source, such that the emerging influence of defects can be studied by lowering the source to zero.

Affiliated with

Also associated with

No associations

Rating

Topological defect formation from 2PI effective action techniques does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Topological defect formation from 2PI effective action techniques, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Topological defect formation from 2PI effective action techniques will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-168127