The Analysis of Current-Voltage (I-V) Characteristics of Schottky Diode in Terms of Gaussian Distribution of Barrier Height

Details The Analysis of Current-Voltage (I-V) Characteristics of Schottky Diode in Terms of Gaussian Distribution of Barrier Height The Analysis of Current-Voltage (I-V) Characteristics of Schottky Diode in Terms of Gaussian Distribution of Barrier Height

Apr 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007aipc..899..594d&link_type=abstract

SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP Conference Proceedings, Volume 899, pp. 594-594 (2007).

Physics

Semiconductor-Device Characterization, Design, And Modeling, Thermionic Emission

Scientific paper

In this work, I-V characteristics of Al/p-Si Schottky (SD) diode were measured in the temperature range of 178-440 K. Obtained data were analyzed a Gaussian distribution of the barrier height (BH). It has been concluded that the temperature dependence of the forward I-V characteristics of the Schottky barrier diodes can be explained on the basis of thermionic emission (TE) mechanism with a Gaussian distribution of the barrier heights.

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