Physics
Scientific paper
Apr 2007
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007aipc..899...83n&link_type=abstract
SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP Conference Proceedings, Volume 899, pp. 83-86 (2007).
Physics
Metal-Insulator-Semiconductor Structures, Electronic Transport Phenomena In Thin Films, Permittivity
Scientific paper
Silicon dioxide used in microelectronics is approaching the limit of its capabilities for further miniaturization, due to the importance of the direct tunnelling in ultrathin films. High permittivity dielectrics (high-k) are subject of special interest in the nowadays search for replacement of silicon dioxide for sub-micro scale electronic devices. Most of the high-k insulating films deposited on silicon exhibit the presence of an inevitably formed interfacial SiOx layer. Many authors consider this layer as detrimental since it degrades the effective permittivity, and hence they study the ways of eliminating it. Our studies based on the comprehensive model of the high-k/SiOx/Si structures, studied in details in the case of Ta2O5, show that the stacked layer properties can be improved compared to both net high-k and SiOx films. Even if the SiOx layer degrades the effective permittivity, it is useful when the thickness is appropriately controlled, since it provides lower leakage currents.
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