Antireflection coatings for silicon charge-coupled devices

Details Antireflection coatings for silicon charge-coupled devices Antireflection coatings for silicon charge-coupled devices

Sep 1987

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1987opten..26..911l&link_type=abstract

Optical Engineering (ISSN 0091-3286), vol. 26, Sept. 1987, p. 911-915.

Physics

8

Antireflection Coatings, Charge Coupled Devices, Quantum Efficiency, Refractivity, Silicon Radiation Detectors, Thin Films, Absorptivity, Oxide Films, Pixels, Vapor Deposition

Scientific paper

A study of materials suitable for silicon CCD antireflection coatings for use in the 0.32 to 1.0 micron spectral range is presented. Constraints on these materials, such as refractive index, absorption coefficient, application method, temperature requirements, internal stress, and radioactivity, are discussed. Hafnium oxide, lead fluoride, and aluminum oxide are found to be among the most suitable thin-film materials available. A number of single-layer and multiple-layer antireflection coating designs optimized for CCDs are also presented, with particular emphasis on the blue and ultraviolet.

Affiliated with

Also associated with

No associations

Rating

Antireflection coatings for silicon charge-coupled devices does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Antireflection coatings for silicon charge-coupled devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Antireflection coatings for silicon charge-coupled devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1676947