Physics
Scientific paper
Oct 2005
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5964...95k&link_type=abstract
Advances in Optical Thin Films II. Edited by Amra, Claude; Kaiser, Norbert; Macleod, H. Angus. Proceedings of the SPIE, Volume
Physics
Scientific paper
Results of fabrication and parameters of infrared detectors based on In-doped lead-tin-telluride (LTT) films are presented. The films were grown using molecular beam epitaxy on BaF2 substrates. The focal plane arrays operated at 7 to 15 K have shown better parameters than those known for impurity photoconductors. The typical average values of NEP were below 1,0×10-18 W /Hz1/2 at T=7K with cut-off λc = 20-25 μm. The operability of 2×128 focal plane arrays was over 90%. The model explaining the electrical and photoelectrical properties of the LTT films based on theories of space charge limited currents (SCLC) and ferroelectric phase transition (FEPT) has been developed. The calculations according to this model are in a good agreement with the experimental data. The laser-excited (λ=336.8 μ) photocurrent was observed, and prospects of usage of LTT-based devices as the submillimeter range detectors were discussed.
Klimov Alexander E.
Shumsky Vladimir N.
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