Semiconductor-cavity QED in high-Q regimes: Detuning effect

Details Semiconductor-cavity QED in high-Q regimes: Detuning effect Semiconductor-cavity QED in high-Q regimes: Detuning effect

2002-10-24

arxiv.org/abs/quant-ph/0210165v1

Phys. Rev. A65, 023805(2002)

Physics

Quantum Physics

7 pages, 8 figures

Scientific paper

10.1103/PhysRevA.65.023805

The non-resonant interaction between the high-density excitons in a quantum well and a single mode cavity field is investigated. An analytical expression for the physical spectrum of the excitons is obtained. The spectral properties of the excitons, which are initially prepared in the number states or the superposed states of the two different number states by the resonant femtosecond pulse pumping experiment, are studied. Numerical study of the physical spectrum is carried out and a discussion of the detuning effect is presented.

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