Development of high-responsivity Ge:Ga photoconductors.

Details Development of high-responsivity Ge:Ga photoconductors. Development of high-responsivity Ge:Ga photoconductors.

Feb 1985

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1985infph..25..273h&link_type=abstract

Infrared Phys., Vol. 25, No. 1/2, p. 273 - 276

Physics

12

Infrared Detectors

Scientific paper

Czochralski-grown Ga-doped Ge (Ge:Ga) single-crystal samples, with a compensation of 10-4 have been modified by the indiffusion of Cu to produce photoconductors which provide NEPs comparable to current optimum Ge:Ga detectors, but exhibit responsivities a factor of 5 - 6 times higher when tested at a background photon flux of 108photon/s at λ = 93 μm. The introduction of Cu, a triple acceptor in Ge which acts as a neutral scattering center, reduces carrier mobility and extends the breakdown field significantly in this ultra-low compensation material.

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