Physics
Scientific paper
Dec 1975
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1975itns...22.....l&link_type=abstract
Conference sponsored by the Institute of Electrical and Electronics Engineers and U.S. Defense Nuclear Agency IEEE Transactions
Physics
Conferences, Extraterrestrial Radiation, Nuclear Radiation, Radiation Effects, Aerospace Environments, Gallium Arsenides, Integrated Circuits, Metal Oxide Semiconductors, Monte Carlo Method, Plasma Sheaths, Radiation Hardening
Scientific paper
Recent theoretical and experimental studies on radiation effects in materials and devices are presented. Some of the topics covered include design optimization of radiation-hardened CMOS integrated circuits, hole transport and charge relaxation in irradiated SiO2 MOS capacitors, energy and temperature dependence of electron-irradiated damage in GaAs, terminal measurements for hardness assurance in TTL devices, monode plasma sheath dynamics, EMP susceptibility of integrated circuits, Monte Carlo analysis of dose profiles near photon irradiated material interfaces, and hardening of MJS77 spacecraft against the Jupiter radiation belts. Individual items are announced in this issue.
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