Physics
Scientific paper
Aug 1998
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3553....9z&link_type=abstract
Proc. SPIE Vol. 3553, p. 9-12, Detectors, Focal Plane Arrays, and Imaging Devices II, Pingzhi Liang; Marc Wigdor; William G. Fre
Physics
Scientific paper
A hybrid HgCdTe 128 X 4 FPA for LWIR detection was fabricated. HgCdTe epilayers were grown on GaAs substrates by MBE. The n(superscript +) on p photodiodes were formed by boron ion implantation. The detector array was passivated with a combination of CdTe and ZnS layers to provide a harmonious transit range between HgCdTe surface and passivation layers. And the combination layers of CdTe and ZnS present a low charge densities and very good electrical properties. The mean product of zero bias differential resistance and area for the diode array was measured to be 3 (Omega) -cm(superscript 2) with a cutoff wavelength of 10.05 micrometers . TDI CCD readout circuits designed and fabricated especially for this 128 X 4 LWIR FPA with charge capacity of 1 to 1.5 X 10(superscript 7) electrons. This shows the characteristics of HgCdTe detector array of the epilayers grown by MBE on GaAs substrates, and also indicates than n(superscript +) p junction formation process and the surface passivation procedure are useful in the fabrication of HgCdTe FPAs.
Su Junhong
Zeng Gehong
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