Wannier-Mott excitons in isotope-disordered crystals

Details Wannier-Mott excitons in isotope-disordered crystals Wannier-Mott excitons in isotope-disordered crystals

Aug 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998rpph...61.1045p&link_type=abstract

Reports on Progress in Physics, Volume 61, Issue 8, pp. 1045-1097 (1998).

Physics

3

Scientific paper

Most of the physical properties of a solid depend to a greater or lesser degree on its isotopic composition. Scientific interest, technological promise and increased availability of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor and insulator crystals. A systematic analysis is for the first time presented of isotopic and disorder effects observed in crystals of various isotopic composition via low-temperature large-radius exciton spectroscopy. Substituting a light isotope with a heavy one increases the interband transition energy and the binding energy of the Wannier-Mott exciton as well as the magnitude of the longitudinal-transverse splitting. The nonlinear variation of these quantities with the isotope concentration is due to the isotopic disordering of the crystal lattice and is consistent with the concentration dependence of line half-widths in exciton reflection and luminescence spectra. The common nature of the isotopic and disorder effects in the crystals of C, LiH, ZnO, ZnSe, CuCl, CdS, 0034-4885/61/8/003/img2, GaAs, Si and Ge is emphasized. The review closes with an outlook on the exciting future possibilities offered through isotope control of a wide range of semiconductor and insulator crystals.

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