SI III electron temperature diagnostics for the solar transition region

Details SI III electron temperature diagnostics for the solar transition region SI III electron temperature diagnostics for the solar transition region

Mar 1989

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989soph..123...33k&link_type=abstract

Solar Physics (ISSN 0038-0938), vol. 123, no. 1, 1989, p. 33-39. Research supported by SERC.

Physics

11

Electron Energy, Electron Transitions, Line Spectra, Plasma Diagnostics, Silicon, Solar Spectra, Emission Spectra, Energy Distribution, Solar Atmosphere, Sunspots

Scientific paper

R-matrix calculations of electron impact excitation rates for transitions in Si III are used to derive the electron-density-sensitive emission line ratios. A comparison of the ratios with observational data for several solar features obtained with the Harvard S-055 spectrometer on board Skylab reveals that theory and experiment are compatible if the electron temperature of the Si III emitting region of the solar atmosphere is log Te = 4.5 but not if log Te = 4.7. The implication of the choice of a lower temperature on the electron energy distribution function is also briefly discussed.

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