Physics
Scientific paper
May 1992
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992jap....71.5269c&link_type=abstract
Journal of Applied Physics (ISSN 0021-8979), vol. 71, no. 10, May 15, 1992, p. 5269-5271.
Physics
9
Crystal Dislocations, Density Distribution, Junction Diodes, Mercury Cadmium Tellurides, P-Type Semiconductors, Doped Crystals, Electron Emission, Energy Gaps (Solid State)
Scientific paper
To investigate the possibility that deep levels are associated with dislocations in narrow band gap HgCdTe, deep level transient spectroscopy has been used to study n(+)-p diodes fabricated on p-type bulk Hg(0.78)Cd(0.22)Te samples with either a 'normal' dislocation density of about 10 exp 5/sq cm or a high dislocation density of about 10 exp 6/sq cm. These samples which are gold doped with a hole concentration of 1.2 x 10 exp 15/cu cm, have a band gap of about 0.12 eV at 77 K. In samples with a 'normal' dislocation density, a deep level of about 80 meV above the valence band was found. However, a midgap level of about 60 meV above the valence band with larger peak amplitude and broader line shapes was found in the sample with a high dislocation density.
Chen Mu-Chun
Schiebel R. A.
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