Ampoule failure sensor development for semiconductor crystal growth experiments

Details Ampoule failure sensor development for semiconductor crystal growth experiments Ampoule failure sensor development for semiconductor crystal growth experiments

Jun 1994

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994jcrgr.140...41w&link_type=abstract

Journal of Crystal Growth (ISSN 0022-0248), vol. 140, no. 1-2, p. 41-44

Physics

Ampoules, Crystal Growth, Fault Detection, Gallium Arsenides, Mercury Cadmium Tellurides, Mercury Tellurides, Semiconductors (Materials), Zinc Tellurides, Chemical Attack, Chemical Reactions, Electrical Resistivity, Vapors

Scientific paper

Currently there are no devices to detect an ampoule failure in semiconductor crystal growth experiments. If an ampoule fails, it will go undetected until the containing cartridge is breached due to chemical degradation. The experiment will then be terminated resulting in a failed experiment and a loss of data. The objective of this research was to develop a reliable failure sensor that would detect a specific liquid or vapor material before the metallic cartridge is degraded and the processing furnace contaminated. The sensor is a chemical fuse made from a metal with which the semiconductor material reacts more rapidly than it does with the containing cartridge. Upon ampoule failure, the sensor is exposed to the vapor or liquid semiconductor and the chemical reaction causes a resistance change in the sensor material. The sensor shows a step change in resistance on the order of megohms when exposed to mercury zinc telluride (HgZnTe), mercury cadmium telluride (HgCdTe), or gallium arsenide (GaAs). This ampoule failure sensor is being tested for possible use on the second United States Microgravity Mission (USML-2) and is the subject of a NASA patent application.

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