Physics
Scientific paper
Aug 1993
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1993spie.1927..794p&link_type=abstract
Proc. SPIE Vol. 1927, p. 794-805, Optical/Laser Microlithography VI, John D. Cuthbert; Ed.
Physics
Scientific paper
To maintain critical dimension control in a production environment, it is essential that all wafer steppers have their effective doses matched. Because high pressure Mercury illumination sources actually have a bandwidth of 10 nm and typical resist absorbance curves are dropping steeply around the 436 nm region, differences between G-line filters can cause exposure shifts between steppers. Functional exposure differences on dose to clear wafers of 9% are explained by combining integrator and G-line filter spectrophotometer tests on ten .54 NA wafer steppers.
Emery Tim
Mukaled Hussein
Przybyla James R.
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