Photodetector with giant internal current amplification: experiment and numerical calculated model

Details Photodetector with giant internal current amplification: experiment and numerical calculated model Photodetector with giant internal current amplification: experiment and numerical calculated model

Feb 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004spie.5251..196m&link_type=abstract

Detectors and Associated Signal Processing. Edited by Chatard, Jean-Pierre; Dennis, Peter N. J. Proceedings of the SPIE, Volume

Physics

Scientific paper

New silicon based optical sensors with a metal insulator semiconductor structure (MIS) are developed and investigated both theoretically and experimentally. The physical properties of these sensors are described with a model of MIS capacitor where a presence of depletion layer of electrons and an inversion layer of holes of a finite depth is taken into account. Two-level voltage bias provides a transient between two quasi-equilibrium inversion modes. This transient is applied both for storage and for readout of the input optical signal for quantitative measurements of a weak infra red radiation. Proposed simple readout procedure provides reading the integrated information with a significant amplification. The amplification (or the current transformation coefficient) is determined by the ratio of integration and readout times and it may exceed 104. A theoretical model is given to explain a behavior of the sensor under storage by thermo generated carries and by photo generated ones jointly. Numerical simulations are of an agreement with experimental investigations of proposed sensors.

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