Design and fabrication of InAsSb detectors

Details Design and fabrication of InAsSb detectors Design and fabrication of InAsSb detectors

Feb 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004spie.5251..103c&link_type=abstract

Detectors and Associated Signal Processing. Edited by Chatard, Jean-Pierre; Dennis, Peter N. J. Proceedings of the SPIE, Volume

Physics

Scientific paper

A study of the optimisation of the detectivity of a mid infrared double heterostructures photovoltaic detector is proposed. Simple approximate analytic expressions for the dark current are compared with full numerical calculations, and give physical insight on the mechanisms dominating the dark current. The analysis is performed step by step in different structures, from a simple p-n junction to the full double heterostructures. The influence of temperature, barrier band gap energy and absorbing layer thickness in a double heterostructures, doping density in the active region on diffusion and generation-recombination mechanisms is analysed.

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