Far infrared absorption by tetrahedrally bonded amorphous semiconductors

Details Far infrared absorption by tetrahedrally bonded amorphous semiconductors Far infrared absorption by tetrahedrally bonded amorphous semiconductors

Dec 1979

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1979aujph..32..663t&link_type=abstract

(Australian Institute of Physics, Solid State Physics Meeting, Wagga Wagga, New South Wales, Australia, Feb. 7-9, 1979.) Austral

Physics

1

Amorphous Semiconductors, Atomic Structure, Band Structure Of Solids, Far Infrared Radiation, Infrared Absorption, Germanium, Silicon, Solid State Physics, Vibrational Spectra

Scientific paper

A discussion of the electronic structure of amorphous semiconductors is given and, attention is given to tetrahedrally bonded silicon and germanium. This background is used to interpret far infrared conductivity data. The results suggest that the void structure in these materials plays a central role in the photon-vibration coupling, particularly at low frequencies.

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