Hydrogenated Amorphous Silicon Deposited on the Asihtest Circuit for Radiation Detection

Details Hydrogenated Amorphous Silicon Deposited on the Asihtest Circuit for Radiation Detection Hydrogenated Amorphous Silicon Deposited on the Asihtest Circuit for Radiation Detection

Jun 2008

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2008apsp.conf...60d&link_type=abstract

ASTROPARTICLE, PARTICLE AND SPACE PHYSICS, DETECTORS AND MEDICAL PHYSICS APPLICATIONS. Proceedings of the 10th Conference. Held

Physics

Medical Physics

Scientific paper

Radiation detectors were developed by depositing 20 μm thick hydrogenated amorphous silicon (a-Si:H) sensors directly on top of the so-called aSiHtest integrated circuit. This circuit was designed in a quarter micron CMOS technology as a global test circuit for this detector technology. The sensor leakage current turned out to be limiting the performance of the whole detector. Its detailed study is presented together with design techniques to reduce it. Direct detections of 10 to 50 keV single electrons were demonstrated on integrated thin strip structures with a pitch down to 10 μm. Results are shown to understand the potential of the technology for ionizing radiation detection.

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