In situ optimization of co-implantation and substrate temperature conditions for nitrogen-vacancy center formation in single-crystal diamonds

Details In situ optimization of co-implantation and substrate temperature conditions for nitrogen-vacancy center formation in single-crystal diamonds In situ optimization of co-implantation and substrate temperature conditions for nitrogen-vacancy center formation in single-crystal diamonds

Mar 2011

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2011njph...13c5022s&link_type=abstract

New Journal of Physics, Volume 13, Issue 3, pp. 035022 (2011).

Physics

1

Scientific paper

In this paper, we present first results of in situ characterization of nitrogen vacancy (NV)-center formation in single-crystal diamonds after implantation of low-energy nitrogen ions (7.7 keV), co-implantation of hydrogen, helium and carbon ions and in situ annealing. Diamond samples were implanted either at room temperature or at 780 °C. We found that dynamic annealing during co-implantation enhances NV-center formation by up to 25%.

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