The screening of charged impurities in bilayer graphene

Details The screening of charged impurities in bilayer graphene The screening of charged impurities in bilayer graphene

Oct 2010

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2010njph...12j3037z&link_type=abstract

New Journal of Physics, Volume 12, Issue 10, pp. 103037 (2010).

Physics

Scientific paper

Positively charged impurities were introduced into a bilayer graphene (BLG) transistor by n-doping with dimethylformamide. Subsequent exposure of the BLG device to moisture resulted in a positive shift of the Dirac point and an increase of hole mobility, suggesting that moisture could reduce the scattering strength of the existing charged impurities. In other words, moisture screened off the 'effective density' of charged impurities. At the early stage of moisture screening the scattering of hole carriers is dominated by long-range Coulomb scatter, but an alternative scattering mechanism should also be taken into consideration when the effective density of impurities is further lowered on moisture exposure.

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