Novel pixel detectors for X-ray astronomy and other applications

Details Novel pixel detectors for X-ray astronomy and other applications Novel pixel detectors for X-ray astronomy and other applications

Apr 2001

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2001nimpa.461..393l&link_type=abstract

Nuclear Instruments and Methods in Physics Research Section A, Volume 461, Issue 1-3, p. 393-404.

Physics

2

Scientific paper

Following previous work in particle physics, the MPI Semiconductor Laboratory has been founded with the purpose of developing novel semiconductor detectors for particle physics and X-ray astronomy. A short description of the already successfully concluded development of pn-CCDs for focal imaging in X-ray astronomy (XMM//Newton X-ray Observatory) is given and the much more demanding requirements in a future X-ray astronomy experiment (XEUS) are discussed. A new type of pixel detector is proposed which will be capable to meet these requirements. It is based on the ``DEPleted-Field Effect Transistor (DEPFET)'' principle. The device operated on a fully depleted silicon wafer allows an internal charge amplification directly above the position where the signal conversion takes place. A very low gate capacitance of the DEPMOS transistor leads to low noise amplification. In contrast to CCDs, neither transfer loss nor ``out-of-time events'' can occur in a DEPFET-array. A very interesting feature is the possibility of repeated non-destructive readout which can be used for noise reduction even for the low-frequency /(1/f) noise. This type of detector will also have its applications in linear collider experiments.

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