Trace Element Depth-Profiles in Presolar SiC

Details Trace Element Depth-Profiles in Presolar SiC Trace Element Depth-Profiles in Presolar SiC

Mar 2010

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2010lpi....41.1976k&link_type=abstract

41st Lunar and Planetary Science Conference, held March 1-5, 2010 in The Woodlands, Texas. LPI Contribution No. 1533, p.1976

Physics

Scientific paper

TOFSIMS has been systematically used to study the distribution of trace
elements in seven presolar SiC grains. There is evidence to suggest that
some trace elements may have been implanted into the grains.

Affiliated with

Also associated with

No associations

Rating

Trace Element Depth-Profiles in Presolar SiC does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Trace Element Depth-Profiles in Presolar SiC, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trace Element Depth-Profiles in Presolar SiC will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1205551