Structural perfection diagnostics of narrow-gap photosensitive semiconductor junctions by electron diffraction

Details Structural perfection diagnostics of narrow-gap photosensitive semiconductor junctions by electron diffraction Structural perfection diagnostics of narrow-gap photosensitive semiconductor junctions by electron diffraction

Nov 2000

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2000spie.4340..261b&link_type=abstract

Proc. SPIE Vol. 4340, p. 261-263, 16th International Conference on Photoelectronics and Night Vision Devices, Anatoly M. Filache

Physics

Scientific paper

In the work are studied structural, electrical and optical properties of film heterojunctions p-Pb1-xSnxTe-n- PbTe obtained by condensation of molecular beams in vacuum approximately 10-6mm mercury pressure. It is determined that diffusion fringes intensity on diffraction patterns are different depending on thickness of films (d) and temperature of films growing (Tf). The intensity of diffusion fringes also depends on survey temperature (Ts). The correlation between intensity of diffusion fringes on electron diffraction patterns and photosensitivity of heterojunctions Pb1-xSnxTe-PbTe is found.

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