May 1982
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1982rpph...45..469s&link_type=abstract
Reports on Progress in Physics, vol. 45, May 1982, p. 469-525.
Physics
23
Epitaxy, Fabrication, Semiconductor Devices, Semiconductors (Materials), Solid State Physics, Technology Assessment, Liquid Phase Epitaxy, Mass Transfer, Molecular Beam Epitaxy, Organometallic Compounds, Production Engineering, Single Crystals, Surface Reactions, Thermodynamics, Vapor Phase Epitaxy
Scientific paper
The future growth of solid-state electronics depends on the ability to produce new high-performance semiconductor devices. This requires the development of new semiconductor materials and the ability to grow special structures, particularly those with very thin layers. Epitaxy, the set of techniques used to produce highly perfect semiconductor layers, is the topic of this review. The basic concepts underlying epitaxy, thermodynamics, mass transport, surface kinetics and defect generation are discussed first. The specific epitaxial techniques are then discussed and compared in this framework. Finally, specific epitaxial techniques are discussed. Liquid-phase epitaxy (LPE) and vapor-phase epitaxy (VPE), including organometallic vapor-phase epitaxy (OMVPE) and molecular-beam epitaxy (MBE), are discussed in detail.
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