Hydrogen interstitials-mediated ferromagnetism in MnxGe1-x magnetic semiconductors

Details Hydrogen interstitials-mediated ferromagnetism in MnxGe1-x magnetic semiconductors Hydrogen interstitials-mediated ferromagnetism in MnxGe1-x magnetic semiconductors

May 2008

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2008njph...10e5015y&link_type=abstract

New Journal of Physics, Volume 10, Issue 5, pp. 055015 (2008).

Physics

2

Scientific paper

Hydrogen interstitials-mediated ferromagnetism in MnxGe1-x magnetic semiconductors was studied by first-principles calculations. It was found that the H:1s state in Mn H Mn complexes can strongly hybridize with the valence states of Mn and change the spin polarization of Mn atoms. Although the doped Mn atoms tend to form the nearest-neighbor Mn atomic pairs with antiferromagnetic coupling in Mn-doped Ge without H, the asymmetrical configurations of Mn H Mn complexes show the ferromagnetic (FM) ground state in Mn-doped Ge with H interstitials. Therefore, Mn-doped Ge with H interstitials is predicted to be an FM semiconductor with higher Curie temperature and larger magnetization than Mn-doped Ge without H.

Affiliated with

Also associated with

No associations

Rating

Hydrogen interstitials-mediated ferromagnetism in MnxGe1-x magnetic semiconductors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Hydrogen interstitials-mediated ferromagnetism in MnxGe1-x magnetic semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hydrogen interstitials-mediated ferromagnetism in MnxGe1-x magnetic semiconductors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1075806