Very heavily electron-doped CrSi2 as a high-performance high-temperature thermoelectric material

Details Very heavily electron-doped CrSi2 as a high-performance high-temperature thermoelectric material Very heavily electron-doped CrSi2 as a high-performance high-temperature thermoelectric material

Mar 2012

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2012njph...14c3045p&link_type=abstract

New Journal of Physics, Volume 14, Issue 3, pp. 033045 (2012).

Physics

Scientific paper

We analyze the thermoelectric behavior, using first principles and Boltzmann transport calculations, of very heavily electron-doped CrSi2 and find that at temperatures of 900–1250 K and electron dopings of 1–4 × 1021 cm‑3, thermopowers as large in magnitude as 200 μV K‑1 may be found. Such high thermopowers at such high carrier concentrations are extremely rare, and suggest that excellent thermoelectric performance may be found in these ranges of temperature and doping.

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