Transitions in highly ionized silicon

Details Transitions in highly ionized silicon Transitions in highly ionized silicon

Oct 1982

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1982soph...80..321g&link_type=abstract

Solar Physics, vol. 80, Oct. 1982, p. 321-331.

Physics

Electron Transitions, Far Ultraviolet Radiation, Ions, Silicon, Solar Spectra, Energy Levels, Transition Probabilities, Wave Equations

Scientific paper

Extensive CI calculations are presented of energy levels, wavelengths, oscillator strengths, line strengths, transitions probabilities, lifetimes, and branching ratios for transitions between the 2lnl-prime (n = 2, 3; l-prime less than or equal to l) states for Si XI. The calculations show that including the nonfine structure relativistic corrections in the Hamiltonian can change the transition probabilities drastically in particular for transitions between the 2l3l-prime (l-prime greater than or equal to l) states. This is a consequence of the very small energy separations between the 2l3l-prime states; a small change in the energy level of each state in the transition can result in quite a large change in the transition energy. For this reason, for transitions between the 2l3l-prime states a set of radial functions which gives a representation of the energy levels to better than 100/cm (0.005 AU) is sought.

Affiliated with

Also associated with

No associations

Rating

Transitions in highly ionized silicon does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Transitions in highly ionized silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transitions in highly ionized silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1032594